Principal Process Engineer - DRAM and Memory Applications

As a Principal Process Engineer at ASM, you will leverage semiconductor processing and analytical equipment to research, develop, and optimize advanced thin-film processes enabling next-generation DRAM and memory technologies. Your work will focus on Atomic Layer Deposition (ALD, PEALD), Epitaxy, PECVD, oxidation, annealing, and curing processes used in highly scaled memory structures, including capacitors, word lines, bit lines, storage nodes, and advanced memory integration schemes.

You will apply deep technical expertise in memory device fabrication to deliver innovative process solutions that address critical scaling, performance, reliability, and integration challenges. You will design and execute complex experiments, interpret advanced characterization data, and collaborate closely with customers and product teams to accelerate technology development. Technical publications, customer engagement, and the creation of Intellectual Property (IP) are key aspects of this role.

Key Responsibilities

• Develop and optimize advanced deposition processes for DRAM and emerging memory applications utilizing ALD, PEALD, Epitaxy, and PECVD technologies.

• Drive process innovation for memory-critical films, including high-k dielectrics, capacitor materials, metal electrodes, barrier layers, conductors, and emerging memory materials.

• Support technology development focused on DRAM scaling challenges such as capacitor formation, buried word lines, advanced patterning, and high-aspect-ratio structures.

• Remain at the forefront of memory technology trends and roadmaps to identify new process opportunities and technology requirements.

• Serve as a technical consultant and subject matter expert for internal teams and leading memory manufacturers worldwide.

• Lead technical problem-solving efforts using scientific methodologies, statistical analysis, and industry-standard tools.

• Design and execute experiments utilizing Design of Experiments (DOE) and Response Surface Methodology (RSM) to optimize process performance.

• Analyze electrical, physical, and materials characterization data to understand film properties and device performance.

• Troubleshoot equipment and process issues through hands-on experimentation and root cause analysis.

• Collaborate with customers to define requirements, execute demonstrations, and develop process solutions addressing critical memory integration challenges.

• Develop methods and techniques for integrating advanced materials into future DRAM and memory device architectures.

• Support product transfers, customer demonstrations, field training, and process documentation to ensure successful deployment of new technology.

• Publish technical papers, present at industry conferences, and contribute to ASM’s patent portfolio.

• Mentor engineers and provide technical leadership across memory-focused development programs.

• May provide supervisory direction to process engineering technicians and support personnel.

Qualifications

• Master's or PhD degree in Chemical Engineering, Materials Science, Electrical Engineering, Physics, or a related technical discipline.

• 7+ years of combined industry, research, and/or academic experience with:

• Advanced thin-film deposition technologies including ALD, PEALD, CVD, PECVD, Epitaxy, oxidation, and annealing.

• DRAM, NAND, or emerging memory device development and integration.

• High-k dielectrics, metal electrodes, conductive films, barrier materials, and capacitor technologies.

• Semiconductor process integration and materials engineering for advanced memory applications.

• Materials characterization techniques including XPS, SIMS, RBS, AFM, XRR, XRD, TEM, SEM, and ellipsometry.

• Strong understanding of electrical characterization techniques and memory device performance metrics.

• Experience supporting advanced memory process development for high-volume manufacturing environments is highly preferred.

• Training or experience with Computational Fluid Dynamics (CFD) is preferred.

Skills

• Deep understanding of DRAM and memory device architecture, fabrication flows, and scaling challenges.

• Demonstrated expertise in thin-film deposition and integration for advanced memory structures.

• Ability to independently lead complex process development projects, including technical direction, schedules, budgets, and resource planning.

• Strong knowledge of the relationship between reactor design, process conditions, and film properties.

• Experience integrating advanced dielectric, conductive, and metal films into memory device architectures.

• Proven capability to develop and fully characterize deposition processes using first-principles understanding and advanced experimental methodologies.

• Expertise in materials characterization techniques such as XPS, SIMS, RBS, AFM, XRD, HRTEM, FESEM, Auger, Raman, and ellipsometry.

• Excellent verbal and written communication skills, with the ability to clearly present complex technical concepts to customers, industry partners, and executive stakeholders.

• Demonstrated track record of customer engagement, technology leadership, technical publications, and patent generation.

Nice-to-Have Memory-Specific Experience

• DRAM capacitor development (high-k and metal electrode systems).

• Buried word line (BWL) integration.

• High aspect ratio deposition and gap-fill applications.

• Capacitor dielectric materials such as ZrO₂, HfO₂, Al₂O₃, and related stacks.

• Advanced patterning and self-aligned integration schemes.

• Emerging memory technologies including MRAM, ReRAM, PCM, or 3D DRAM concepts.

• Direct experience supporting memory manufacturers such as Micron, Samsung, SK hynix, Kioxia, Western Digital, YMTC, or CXMT.